1.

Conference Proceedings
Conference Proceedings
1. A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient
Rao, S. ; Saddow, S.E. ; Bergamini, F. ; Nipoti, R. ; Emirov, Y. ; Agrawal, Anant
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.229-234,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
2.

Conference Proceedings
Conference Proceedings
2. A Highly Effective Edge Termination Design for SiC Planar High Power Devices
Perez, R. ; Mestres, N. ; Blanque, S. ; Tournier, D. ; Jorda, X. ; Godignon, P. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1253-1256,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
3.

Conference Proceedings
Conference Proceedings
3. Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation
Poggi, A. ; Nipoti, R. ; Solmi, S. ; Bersani, M. ; Vanzetti, L.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1357-1360,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC
Parisini, A. ; Poggi, A. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.837-840,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
Lazar, M. ; Cardinali, G. ; Raynaud, C. ; Poggi, A. ; Planson, D. ; Nipoti, R. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1025-1028,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC
Scorzoni, A. ; Moscatelli, F. ; Poggi, A. ; Cardinali, G.C. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.881-884,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements
Moscatelli, F. ; Scorzoni, A. ; Poggi, A. ; Cardinali, G.C. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.993-996,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
8.

Conference Proceedings
Conference Proceedings
8. SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature
Poggi, A. ; Nipoti, R. ; Moscatelli, F. ; Cardinali, G.C. ; Canino, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.945-950,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460