1.

Conference Proceedings
Conference Proceedings
1. Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor
Bergamini, F. ; Rao, S.P. ; Poggi, A. ; Tamarri, F. ; Saddow, S.E. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.819-822,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
Rao, S.P. ; Bergamini, F. ; Nipoti, R. ; Hoff, A.M. ; Oborina, E. ; Saddow, S.E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.839-842,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes
Canino, M. ; Castaldini, A. ; Cavallini, A. ; Moscatelli, F. ; Nipoti, R. ; Poggi, A.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.811-814,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient
Nipoti, R. ; Bergamini, F. ; Moscatelli, F. ; Poggi, A. ; Canino, M. ; Bertuccio, G.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.815-818,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Ar Annealing at 1600℃ and 1650℃ of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature
Bergamini, F. ; Moscatelli, F. ; Canino, M. ; Poggi, A. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.625-628,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer
Moscatelli, F. ; Scorzoni, A. ; Poggi, A. ; Canino, M. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.737-740,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
7.

Conference Proceedings
Conference Proceedings
7. Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors
Moscatelli, F. ; Scorzoni, A. ; Poggi, A. ; Bruzzi, M. ; Lagomarsino, S. ; Mersi, S. ; Sciortino, S. ; Lazar, M. ; Placido, A. Di ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.1021-1024,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
8.

Conference Proceedings
Conference Proceedings
8. Interracial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient
Poggi, A. ; Moscatelli, F. ; Scorzoni, A. ; Marino, G. ; Nipoti, R. ; Sanmartin, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.979-982,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
9.

Conference Proceedings
Conference Proceedings
9. Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC
Nipoti, R. ; Carnera, A. ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.811-814,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Lazar, M. ; Raynaud, C. ; Planson, D. ; Locatelli, M.-L. ; Isoird, K. ; Ottaviani, L. ; Chante, J.P. ; Nipoti, R. ; Poggi, A. ; Cardinali, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.827-830,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC
Nipoti, R. ; Parisini, A. ; Poggi, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1109-1112,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
Godignon, P. ; Jorda, X. ; Nipoti, R. ; Cardinali, G. ; Mestres, N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1317-1320,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient
Rao, S. ; Saddow, S.E. ; Bergamini, F. ; Nipoti, R. ; Emirov, Y. ; Agrawal, Anant
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.229-234,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
14.

Conference Proceedings
Conference Proceedings
14. Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC
Poggi, A. ; Parisini, A. ; Solmi, S. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.665-668,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
15.

Conference Proceedings
Conference Proceedings
15. n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature
Canino, M. ; Castaldini, A. ; Cavallini, A. ; Moscatelli, F. ; Nipoti, R. ; Poggi, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.649-652,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
16.

Conference Proceedings
Conference Proceedings
16. J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃
Bergamini, F. ; Rao, S. P. ; Saddow, S. E. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.629-632,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
17.

Conference Proceedings
Conference Proceedings
17. Structural,Optical and Chemical Characterization of 300℃,MeV Ion Implanted and 1700℃Annealed 6H-SiC
Nipoti, R. ; Carnera, A. ; Mattei, G.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
18.

Conference Proceedings
Conference Proceedings
18. The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects
Lulli, G. ; Albertazzi, E. ; Nipoti, R. ; Bianconi, M. ; Carnera, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.599-602,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
19.

Conference Proceedings
Conference Proceedings
19. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Lazar, M. ; Raynaud, C. ; Planson, D. ; Locatelli, M.-L. ; Isoird, K. ; Ottaviani, L. ; Chante, J.P. ; Nipoti, R. ; Poggi, A. ; Cardinali, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.827-830,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
20.

Conference Proceedings
Conference Proceedings
20. Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
Godignon, P. ; Jorda, X. ; Nipoti, R. ; Cardinali, G. ; Mestres, N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1317-1320,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
21.

Conference Proceedings
Conference Proceedings
21. A Highly Effective Edge Termination Design for SiC Planar High Power Devices
Perez, R. ; Mestres, N. ; Blanque, S. ; Tournier, D. ; Jorda, X. ; Godignon, P. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1253-1256,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
22.

Conference Proceedings
Conference Proceedings
22. 4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing
Nipoti, R. ; Carnera, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.279-282,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
23.

Conference Proceedings
Conference Proceedings
23. Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation
Poggi, A. ; Nipoti, R. ; Solmi, S. ; Bersani, M. ; Vanzetti, L.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1357-1360,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
24.

Conference Proceedings
Conference Proceedings
24. Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC
Parisini, A. ; Poggi, A. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.837-840,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
25.

Conference Proceedings
Conference Proceedings
25. The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
Lazar, M. ; Cardinali, G. ; Raynaud, C. ; Poggi, A. ; Planson, D. ; Nipoti, R. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1025-1028,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
26.

Conference Proceedings
Conference Proceedings
26. Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC
Scorzoni, A. ; Moscatelli, F. ; Poggi, A. ; Cardinali, G.C. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.881-884,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
27.

Conference Proceedings
Conference Proceedings
27. Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements
Moscatelli, F. ; Scorzoni, A. ; Poggi, A. ; Cardinali, G.C. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.993-996,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
28.

Conference Proceedings
Conference Proceedings
28. SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature
Poggi, A. ; Nipoti, R. ; Moscatelli, F. ; Cardinali, G.C. ; Canino, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.945-950,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
29.

Conference Proceedings
Conference Proceedings
29. Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC
Nipoti, R. ; Parisini, A. ; Poggi, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1109-1112,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes
Poggi, A. ; Nipoti, R. ; Cardinali, G.C. ; Moscatelli, F.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.621-624,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
31.

Conference Proceedings
Conference Proceedings
31. Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data
Moscatelli, F. ; Scorzoni, A. ; Poggi, A. ; Cardinali, G.C. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.673-676,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
32.

Conference Proceedings
Conference Proceedings
32. Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC
Nipoti, R. ; Carnera, A. ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.811-814,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
33.

Conference Proceedings
Conference Proceedings
33. Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes
Nava, F. ; Vanni, P. ; Verzellesi, G. ; Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Nipoti, R. ; Donolato, C.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.757-762,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356