Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

35 results

Conference Proceedings

1. Optically Detected Cyclotron Resonance for Defect Characterization

Godlewski,M. ; Chen,W.M. ; Monemar,B.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1353-1358, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

2. Optically Detected Wagnetic Resotrance Studies of Non-Radiative Recombination Centres in 6H SiC

Son,N.T. ; Wagner,Mt. ; Sorman,E. ; Chen,W.M. ; Monemar,B. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.599-602, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

3. Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures

Monemar,B. ; Bergman,J.P. ; Pozina,G. ; Dalfors,J. ; Sernelius,B.E. ; Holtz,P.O. ; Amano,H. ; Akasaki,I.

Pub. info.:	Ultrafast phenomena in semiconductors III : 27-29 January, 1999, San Jose, California. pp.168-178, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3624

Conference Proceedings

4. The pseudo-donor electronic states of a metastable defect in silicon studied by uniaxial stress spectroscopy

Svensson,J.H. ; Janzen,E. ; Kordina,O. ; Monemar,B.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.327-332, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

5. ODMR and electron spin echo studies on the non-radiative triplet state of the(V-O)0 defect in silicon

Frens,A.M. ; Schmidt,J. ; Chen,W.M. ; Monemar,B.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.357-362, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

6. Room Temperature Photoluminescence Linewidth versus Material Quality of GaN

Monemar,B. ; Buyanova,I.A. ; Bergman,J.P. ; Amano,H. ; Akasaki,I.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1319-1322, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Are There any Shallow Acceptors in GaN?

Monemar,B.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1327-1330, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. SF6/O2 and CF4/O2 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy:Role of Oxygen

Buyanova,I.A. ; Henry,A. ; Monemar,B. ; Lindstrom,J.L. ; Sheinkman,M.K. ; Oehrlein,G.S.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1807-1812, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

9. Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon(100)Substrates

Godlewski,M. ; Ivanov,V.Yu. ; Bergman,J.P. ; Monemar,B. ; Barski,A. ; Langer,R.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1343-1346, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells

Zhao,Q.X. ; Westgaard,T. ; Monemar,B. ; Fimland,B.O. ; Johannessen,K.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.333-338, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

35 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by: