1.

Conference Proceedings
Conference Proceedings
1. X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
Hofstaetter,A. ; Meyer,B.K. ; Scharmann,A. ; Baranov,P.G. ; Ilyin,I.V. ; Mokhov,E.N.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.595-598,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Residual Donors in GaN Epitaxial Films-A Correlation of HALL Effect,SIMS and Photoluminescence Data
Topf,M. ; Kriegseis,W. ; Burkhardt,W. ; Dirnstorfer,I. ; Meister,D. ; Meyer,B.K.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1323-1326,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. On the Identification of an Al Related Deep Centre in 4H-SiC-Self-Compensation in SiC?
Meyer,B.K. ; Hofstaetter,A. ; Baranov,P.G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.591-594,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268