1.

Conference Proceedings
Conference Proceedings
1. On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C
Trauwaert,M.-A. ; Vanhellemont,J. ; Maes,H.E. ; Bavel,A.-M.Van ; Langouche,G. ; Stesmans,A. ; Clauws,P.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1147-1152,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. Substrate Stresses in Heterostructures
Pinardi,K. ; Jain,S.C. ; Maes,H.E. ; Atkinson,A.
Pub. info.: Semiconductor Devices.  pp.30-32,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733