1.

Conference Proceedings
Conference Proceedings
1. Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination
Zhang, Q. ; Madangarli, V. ; Tarplee, M. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1223-1226,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
2.

Conference Proceedings
Conference Proceedings
2. Computer Simulation of p-Type SiC Schottky Diode using ATLAS
Tarplee, M. ; Madangarli, V. ; Zhang, Q. ; Palmer, P. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1231-1234,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
3.

Conference Proceedings
Conference Proceedings
3. Comparison of Current - Voltage Characteristics of n - and p-Type 6H-SiC Schottky Diodes
Zhang, Q. ; Madangarli, V. ; Gao, Y. ; Sudarshan, T.S.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640