Blank Cover Image

4H-SiC Trench Structure Schottky Diodes

Author(s):
Publication title:
Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
Title of ser.:
Materials science forum
Ser. no.:
717-720
Pub. Year:
2012
Pt.:
2
Page(from):
933
Page(to):
936
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy

M. Nakamura, Y. Hashino, T. Furusho, H. Kinoshita, H. Shiomi

Trans Tech Publications
7 Conference Proceedings Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

S. Yang, Q.W. Song, X.Y. Tang, Y.M. Zhang, H. Yuan, Q.J. Sun

Trans Tech Publications
2 Conference Proceedings Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380° C

Y. Nanen, M. Aketa, Y. Nakano, H. Asahara, T. Nakamura

Trans Tech Publications
8 Conference Proceedings Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Suda, J., Nakamura, S., Miura, M., Kimoto, T., Matsunami, H.

Trans Tech Publications
3 Conference Proceedings Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

Nakamura, T., Miyanagi, T., Kamata, I., Tsuchida, H.

Trans Tech Publications
9 Conference Proceedings Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Suda, J., Nakamura, S., Miura, M., Kimoto, T., Matsunami, H.

Trans Tech Publications
4 Conference Proceedings SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth

Miura, M., Nakamura, S.-i., Suda, J., Kimoto, T., Matsunami, H.

Trans Tech Publications
10 Conference Proceedings Planar Schottky Microwave Diodes on 4H-SiC

Sudow, M., Rorsman, N., Nilsson, P. A., Zirath, H.

Trans Tech Publications
5 Conference Proceedings 600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination

T. Yamamoto, T. Endo, N. Kato, H. Nakamura, T. Sakakibara

Trans Tech Publications
11 Conference Proceedings 690V, 1.00 mΩcm2 4H-SiC Double-Trench MOSFETs

Y. Nakano, R. Nakamura, H. Sakairi, S. Mitani, T. Nakamura

Trans Tech Publications
6 Conference Proceedings Cathodoluminescence Study of SiO2/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing

A. Chanthaphan, Y. Fukushima, K. Yamamoto, M. Aketa, H. Asahara

Trans Tech Publications
12 Conference Proceedings 4H-SiC Trench Schottky Diodes for Next Generation Products

Q.C.J. Zhang, J. Duc, V. Mieczkowski, B. Hull, S. Allen

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12