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Characterization of Polysilicon Gate Etch with Ultra Thin Gate Oxide (<35 A゜) in a Decoupled Plasma Source Etcher

Author(s):
Lii, T.
Park, E.
Lutz, J.
Wu, W.
Simpson, L.
Mui, D.
1 more
Publication title:
Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-30
Pub. Year:
1997
Page(from):
79
Page(to):
84
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771832 [1566771838]
Language:
English
Call no.:
E23400/97-30
Type:
Conference Proceedings

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