1.

Conference Proceedings
Conference Proceedings
1. The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation
Gila, B. P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J. R. ; Onstine, A. H. ; Lambers, E. ; Siebein, K. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.385-396,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
2.

Conference Proceedings
Conference Proceedings
2. Determination of mask induced polarization effects occurring in hyper NA immersion lithography
Huang, W. C. ; Lai, C. M. ; Luo, B. ; Tsai, C. K. ; Tsay, C. S. ; Lai, C. W. ; Kuo, C. C. ; Liu, R. G. ; Lin, H. T. ; Lin, B. J.
Pub. info.: Optical microlithography XVIII : 1-4 March, 2005, San Jose, California, USA.  pp.543-554,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5754
3.

Conference Proceedings
Conference Proceedings
3. Surface State Characterization Methods for Si02 on 4H-SiC
LaRoche, I.R. ; Kim, J. ; Johnson, J.W. ; Luo, B. ; Kang, B.S. ; Mehandru, R. ; Irokawa, Y. ; Pearton, S.I. ; Chung, G. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.282-291,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
4.

Conference Proceedings
Conference Proceedings
4. Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics
Gila, B.P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J.R. ; Onstine, A.H. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.212-223,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
5.

Conference Proceedings
Conference Proceedings
5. GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates
Irokawa, Y. ; Luo, B. ; Kim, Jihyun ; Kang, B.S. ; LaRoche, J.R. ; Ren, F ; Pan, C.-C. ; Chen, G.T. ; Chyi, J.-I. ; Park, S.S. ; Park, Y.J. ; Gila, B.P. ; Abernathy, C.R. ; Balk, K.H. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.306-320,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
6.

Conference Proceedings
Conference Proceedings
6. Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors
Abernathy, C.R. ; Gila, B.P. ; Onstine, A.H. ; Pearton, S.J. ; Kim, J. ; Luo, B. ; Mehandru, R. ; Ran, F. ; Gillespie, J.K. ; Fitch, R.C. ; Sewell, J. ; Dettmer, R. ; Via, G.D. ; Crespo, A. ; Jenkins, T.J. ; Irokawa, Y.
Pub. info.: Dielectrics in emerging technologies : proceedings of the international symposium.  pp.330-341,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-1
7.

Conference Proceedings
Conference Proceedings
7. Study of Radiation Induced Resistance Mechanisms in GaAs MESFET and TLM Structures
Luo, B. ; Schoenfeld, D. ; Johnson, W.J. ; Pearton, S.J. ; Ren, F.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.250-257,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
8.

Conference Proceedings
Conference Proceedings
8. The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs
Luo, B. ; Trivedi, V.P. ; Ren, F. ; Hsu, C.H. ; Pearton, S.J. ; Abernathy, C.R. ; Cao, X. ; Wu, C.S. ; Hoppe, M. ; Sasserath, J. ; Lee, J.W.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.158-170,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
9.

Conference Proceedings
Conference Proceedings
9. p-Ohmic Contact Study for Intra-Cavity Contacts in AlGaAs/GaAs VCSELs
Luo, B. ; Dang, G. ; Zhang, A.-P. ; Ren, F. ; Lopata, J. ; Chu, S.N.G. ; Hobson, W.S ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.232-240,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
10.

Conference Proceedings
Conference Proceedings
10. SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors
Johnson, J.W. ; Gila, B.P. ; Luo, B. ; Lee, K.P. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I. ; Nee, T.E. ; Lee, C.M. ; Chuo, C.C. ; Anderson, T.J. ; Ren, F.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.152-157,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18