Screening SIMOX wafers' background doping for SOI CMOS SRAM production
- Author(s):
- Publication title:
- Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 97-23
- Pub. Year:
- 1997
- Page(from):
- 137
- Page(to):
- 142
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771764 [1566771765]
- Language:
- English
- Call no.:
- E23400/97-23
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
REVENUE SENSITIVITY TO YIELD AND STARTING WAFER COST IN SOI SRAM PRODUCTION
Electrochemical Society |
2
Conference Proceedings
Radiation response of SOI CMOS translstors/4M SRAMs fabricated in UNIBOND substrates
Electrochemical Society |
Electrochemical Society |
3
Conference Proceedings
Heavy Ion Induced Upset Cross-Sections of 150nm SOI CMOS SRAMs Fabricated in UNIBOND
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
10
Conference Proceedings
Quality improvement of SIMOX wafers by utilIzing nitrogen-doped Cz Silicon crystal
Electrochemical Society |
5
Conference Proceedings
MOSFFET Based 'Gated-Diode' Characterization of the Buried Oxide Interface of Irradiated and non-Irradiated SIMOX and UNIBOND Wafers
Electrochemical Society |
11
Conference Proceedings
Spectroscopic ellipsometry characterization of the interfacial roughness in SIMOX wafer
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |