1.

Conference Proceedings
Conference Proceedings
1. THE EFFECT OF THE INITIAL NUCLEATION TEMPERATURE ON THE MISFIT DISLOCATION STRUCTURE OF InP-0ON-GaAs HETEROSTRUCTURES
Riesz, Ferenc ; Radnoczi, G. ; Pecz, B. ; Rakennus, K. ; Hakkaralnen, T. ; Pesek, A. ; Lischka, K.
Pub. info.: Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A..  pp.461-466,  1992.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 263
2.

Conference Proceedings
Conference Proceedings
2. LARGE AREA (100)CdTe AND CdZnTe LAYERS ON (l00)GaAs GROWN BY HOT WALL BEAM EPITAXY FOR EgCdTe PHOTOVOLTAIC MWIR-DETECTORARRAY APPLICATION
Humenberger, J. ; Greesslehner, K.H. ; Schirz, W. ; Lischka, K. ; Sitter, H.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.53-58,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
3.

Conference Proceedings
Conference Proceedings
3. Mechanisms of Optical Gain in Cubic GaN and InGaN
Holst, J. ; Hoffmann, A. ; Broser, I. ; Frey, T. ; Schottker, B. ; As, D. J. ; Schikora, D. ; Lischka, K.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G2.3.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. p-Type Conductivity with a High Hole Mobility in Cubic GaN/GaAs Epilayers
As, D. J. ; Ruther, A. ; Lubbers, M. ; Mimkes, J. ; Lischka, K. ; Schikora, D.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.615-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
5.

Conference Proceedings
Conference Proceedings
5. Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
Lisker, M. ; Krtschil, A. ; Witte, H. ; Christen, J. ; As, D. J. ; Schottker, B. ; Lischka, K.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.14.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
6.

Conference Proceedings
Conference Proceedings
6. p- and n-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
As, D. J. ; Simonsmeier, T. ; Busch, J. ; Schottker, B. ; Lubbers, M. ; Mimkes, J. ; Schikora, D. ; Lischka, K. ; Kriegseis, W. ; Burkhardt, W. ; Meyer, B. K.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.24.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
7.

Conference Proceedings
Conference Proceedings
7. Depth-Resolved and Excitation Power Dependent Cathodo-luminescence of MBE-Grown Cubic GaN Epilayers
As, D. J. ; Schottker, C. Wang. B. ; Schikora, D. ; Lischka, K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.661-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
8.

Conference Proceedings
Conference Proceedings
8. Time resolved photoluminescence of cubic Mg doped GaN
Seitz, R. ; Gaspar, C. ; Monteiro, T. ; Pereira, E. ; Schoettker, B. ; Frey, T. ; As, D. J. ; Schikora, D. ; Lischka, K.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.225-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572