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12 results

Conference Proceedings

1. Modeling of Extended Defects in Silicon

Law, M. E. ; Jones, K. S. ; Earles, S. K. ; Lilak, A. D. ; Xu, J-W.

Pub. info.:	Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.3-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	439

Conference Proceedings

2. Point and Extended Defect Interactions in Silicon

Law, M. E. ; Earles, S. K.

Pub. info.:	Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.379-, 1997. Pittsburg, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	469

Conference Proceedings

3. An Investigation of Vacancy Population During Arsenic Activation in Silicon

Dokumaci, O. ; Gossmann, H-J. ; Jones, K. S. ; Law, M. E.

Pub. info.:	Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.151-, 1997. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	442

Conference Proceedings

4. Arsenic Trapping and its Effect on Enhanced Diffusion

Brindos, R. ; Law, M. E. ; Jones, K. S. ; Andideh, E.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.. pp.169-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	568

Conference Proceedings

5. Nitrogen Implantation and Diffusion in Silicon

Adam, L. S. ; Law, M. E. ; Dokumaci, O. ; Haddara, Y. ; Murthy, C. ; Park, H. ; Hegde, S. ; Chidambarrao, D. ; Mollis, S. ; Domenicucci, T. ; Dziobkowski, C. ; Jones, K. ; Wong, P. ; Young, R. ; Srinivasan, R.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.. pp.277-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	568

Conference Proceedings

6. Transient Enhanced Diffusion of Phosphorus and Defect Evolution in P+ Implanted Si

Li, J. ; Keys, P. ; Chen, J. ; Law, M. E. ; Jones, K. S. ; Jasper, C.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.. pp.175-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	568

Conference Proceedings

7. Effect of Extended Defects on the Enhanced Diffusion of Phosphorus Implanted Silicon

Keys, P. H. ; Li, J. H. ; Heitman, E. ; Packan, P. A. ; Law, M. E. ; Jones, K. S.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.. pp.199-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	568

Conference Proceedings

8. Determining the Enthalpy of Formation of a Si Interstitial using Quantitative TEM and SIMS

Bharatan, S. ; Haddara, Y. M. ; Law, M. E. ; Jones, K. S.

Pub. info.:	Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.111-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	532

Conference Proceedings

9. Modeling of Extended Defects in Silicon

Law, M. E. ; Jones, K. S. ; Earles, S. K. ; Lilak, A. D. ; Xu, J-W.

Pub. info.:	Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.45-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	438

10.

Conference Proceedings

10. Effect of the End of Range Loop Layer Depth on the Evolution of {311} Defects

Raman, R. ; Law, M. E. ; Krishnamoorthy, V. ; Jones, K. S.

Pub. info.:	Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.61-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	532

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