1.

Conference Proceedings
Conference Proceedings
1. CALCULATION OF SLIP LENGTH IN 300 mm SILICON WAFERS DURING THERMAL PROCESSES
Akatsuka, M. ; Sueoka, K. ; Katahama, H. ; Adachi, N.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.671-682,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
2.

Conference Proceedings
Conference Proceedings
2. Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers
Sucoka, K. ; Yonemura, M. ; Akatsuka, M. ; Katahama, H. ; Ono, T. ; Asayama, E.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.253-267,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
3.

Conference Proceedings
Conference Proceedings
3. Strain Reduction in GaAs Epilayers on Si by the Control of Thermally Introduced Misfit Dislocations
Asai, K. ; Katahama, H. ; Shiba, Y.
Pub. info.: Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII).  pp.237-245,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-10