1.

Conference Proceedings
Conference Proceedings
1. ATOMIC LAYER EPITAXY OG GaAs ON Si BY MOCVD
Karam, N. H. ; Haven, V. E. ; Vermon,. S. M. ; Tan, J. C. ; El-Masry, N. A.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.331-336,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
2.

Conference Proceedings
Conference Proceedings
2. IMPROVEMENT OF MINORITY-CARRIER PROPERTIES OF GaAs ON Si
Vemmon, S. M. ; Ahrenkiel, R. K. ; Al-Jassim, M. M. ; Dixon, T. M. ; Jones, K. M. ; Tobin,. S. P. ; Karam, N. H.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.349-356,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
3.

Conference Proceedings
Conference Proceedings
3. LASER ENHANCED SELECTIYE EPITAXY OF III-V COMPOUNDS
Karam, N. H. ; Liu, H. ; Yoshida, I. ; Katsuyama, T. ; Bedair, S. M. ; El-Mastry, N. ; Jaing, B. ; Salih, A. S. M.
Pub. info.: Laser and particle-beam chemical processing for microelectronics : symposium held December 1-3, 1987, Boston, Massachusetts, USA.  pp.285-290,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 101