1.

Conference Proceedings
Conference Proceedings
1. A Study Of Boron Clustering Transients and Mechanisms in Doped Silicon
Lilak, Aaron Douglas ; Krishnamoorthy, Viswanath ; Vieira, David ; Law, Mark E. ; Jones, K. S.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B5.4-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610
2.

Conference Proceedings
Conference Proceedings
2. The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon
Robertson, L.S. ; Brindos, R. ; Jones, K. S. ; Law, Mark E. ; Downey, D. F. ; Falk, S. ; Liu, J.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B5.8-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610
3.

Conference Proceedings
Conference Proceedings
3. Reaction of Excess Silicon Interstitials in the Presence of Arsenic and Germanium
Brindos, R. ; Keys, P.H. ; Griglione, M. ; Jones, K. S. ; Law, M. E. ; Agarwal, Aditya ; Andideh, Ebrahim
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B8.4-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610
4.

Conference Proceedings
Conference Proceedings
4. Energy Dependence Of Transient Enhanced Diffusion And {311} Defect Kinetics
Saleh, Hugo ; Law, Mark E. ; Bharatan, Sushil ; Jones, K. S. ; Krishnamoorthy, Wish ; Buyuklimanli, Temel
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B6.7-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610
5.

Conference Proceedings
Conference Proceedings
5. Phosphorus / Silicon Interstitial Annealing After Ion Implantation
Keys, P. H. ; Brindos, R. ; Krishnamoorthy, V. ; Puga-Lambers, M. ; Jones, K. S. ; Law, Mark E.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B6.6-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610
6.

Conference Proceedings
Conference Proceedings
6. Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation
Robertson, L. S. ; Warnes, P. N. ; Jones, K. S. ; Earles, S. K. ; Law, M. E. ; Downey, D. F. ; Falk, S. ; Liu, J.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B4.2-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610