1.

Conference Proceedings
Conference Proceedings
1. Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
Kim, H. S. ; Lin, J. Y. ; Jiang, H. X. ; Chow, W. W. ; Botchkarev, A. ; Morkoc, H.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.3.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
2.

Conference Proceedings
Conference Proceedings
2. Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN Heterostructures
Li, J. Z. ; Lin, J. Y. ; Jiang, H. X. ; Khan, M. A. ; Chen, Q. ; Salvador, A. ; Botchkarev, A. ; Morkoc, H.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.537-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
3.

Conference Proceedings
Conference Proceedings
3. Growth and Characterization of BxGa1-xN on 6H-SiC (0001) by MOVPE
Wei, C. H. ; Xie, Z. Y. ; Edgar, J. H. ; Zeng, K. C. ; Lin, J. Y. ; Jiang, H. X. ; Ignatiev, C. ; Chaudhuri, J. ; Braski, D. N.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.79.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Well Thickness and Doping Effects, and Room-Temperature Emission Mechanisms in InGaN/GaN and GaN/AlGaN Multiple-Quantum-Wells
Zeng, K. C. ; Smith, M. ; Lin, J. Y. ; Jiang, H. X. ; Tang, H. ; Salvador, A. ; Kim, W. ; Morkoc, H. ; Khan, M. Asif
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.643-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
5.

Conference Proceedings
Conference Proceedings
5. Photoluminescence Properties of GaN/AlGaN Multiple-Quantum-Well Microdisks
Mair, R. A. ; Zeng, K. C. ; Lin, J. Y. ; Jiang, H. X. ; Zhang, B. ; Dai, L. ; Tang, H. ; Botchkarev, A. ; Kim, W. ; Morkoc, H.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.649-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Optical Properties of Mg-GaN, GaN/AlGaN SCH Structures, and GaN on ZnO Substrates
Morkoc, H. ; Kim, W. ; Aktas, O. ; Salvador, A. ; Botchkarev, A. ; Reynolds, D. C. ; Look, D. C. ; Smith, M. ; Chen, G. D. ; Lin, J. Y. ; Jiang, H. X. ; Schmidt, T. J. ; Yang, X. H. ; Shan, W. ; Song, J. J. ; Goldenberg, B. ; Litton, C. W. ; Evans, K.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.527-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
7.

Conference Proceedings
Conference Proceedings
7. Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells
Smith, M. ; Lin, J. Y. ; Jiang, H. X. ; Khan, A. ; Chen, Q. ; Salvador, A. ; Botchkarev, A. ; Morkoc, H.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.829-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449