1.

Conference Proceedings
Conference Proceedings
1. Group I Elements in ZnO
Meyer, B. K. ; Volbers, N. ; Zeuner, A. ; Lautenschlager, S. ; Sann, J. ; Hoffmann, A. ; Haboeck, U.
Pub. info.: Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A..  pp.491-496,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 891
2.

Conference Proceedings
Conference Proceedings
2. Excitonic Composites
Slepyan, G. Ya. ; Maksimenko, SA. ; Hoffmann, A. ; Bimberg, D.
Pub. info.: Advances in electromagnetics of complex media and metamaterials.  pp.385-402,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 89
3.

Conference Proceedings
Conference Proceedings
3. Large Magnetoresistance in Oxide Based Ferromagnet/Superconductor Spin Switches
Pena, V. ; Nemes, N. ; Visani, C. ; Garcia-Barriocanal, J. ; Bruno, F. ; Arias, D. ; Sefrioui, Z. ; Leon, C. ; Te Velthuis, S.G.E. ; Hoffmann, A. ; Garcia-Fernandez, M. ; Santamaria, Jacobo
Pub. info.: Degradation processes in nanostructured materials : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A..  pp.95-102,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 887
4.

Conference Proceedings
Conference Proceedings
4. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy
Kaschner, A. ; Holst, J. ; Gfug, U. von ; Hoffmann, A. ; Bertram, F. ; Riemann, T. ; Rudloff, D. ; Fischer, P. ; Christen, J. ; Averbeck, R. ; Riechert, H.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.34.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
5.

Conference Proceedings
Conference Proceedings
5. Native defect characterization in ZnGeP2
Hoffmann, A. ; Born, H. ; Naser, A. ; Gehlhoff, W. ; Maffetone, J. ; Perlov, D. ; Ruderman, W. ; Zwieback, I. ; Dietz, N. ; Bachmann, K. J.
Pub. info.: Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A..  pp.373-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 607
6.

Conference Proceedings
Conference Proceedings
6. Formation and Dissociation of Hydrogen-Related Defect Centers in Mg-Doped GaN
Gelhausen, O. ; Phillips, M.R ; Goldys, E.M. ; Paskova, T. ; Monemar, B. ; Strassburg, M. ; Hoffmann, A.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.497-502,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
7.

Conference Proceedings
Conference Proceedings
7. Trap competition inducing R.T.S noise in saturation range in N-MOSFETs
Leyris, C. ; Hoffmann, A. ; Valenza, M. ; Vildeuil, J. -C. ; Roy, F.
Pub. info.: Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA.  pp.41-51,  2005.  Bellingham, Washington.  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5844
8.

Conference Proceedings
Conference Proceedings
8. Optical Properties of Mu-Doped GaN
Gelhausen, O. ; Malguth, E. ; Phillips, M.R ; Goldys, E.M. ; Strassburg, M. ; Hoffmann, A. ; Graf, T. ; Gjukic, M. ; Stutzmann, M.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.569-574,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
9.

Conference Proceedings
Conference Proceedings
9. Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy
Holst, J. ; Kaschner, A. ; Hoffmann, A. ; Broser, I. ; Fischer, P. ; Bertram, F. ; Riemann, T. ; Christen, J. ; Hiramatsu, K. ; Shibata, T. ; Sawaki, N.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1575-1578,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
10.

Conference Proceedings
Conference Proceedings
10. Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy
Bertram, F. ; Riemann, T. ; Rudloff, D. ; Christen, J. ; Kaschner, A. ; Hoffmann, A. ; Hiramatsu, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1483-1486,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)