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23 results

Conference Proceedings

1. ZINC DIFFUSION IN GaAs-A1GaAs HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURES

Hobson, W. S. ; Pearton, S. J. ; Jordan, A. S.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.321-326, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

2. IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING

Ren, F. ; Pearton, S. J. ; Fullowan, T. R. ; Hobson, W. S. ; Chu, S. N. G. ; Emerson, A. B.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.417-424, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

3. USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs

Ren, F. ; Emerson, A. B. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Lothian, J.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.409-416, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

4. ION IMPLANTATION DOPING OF InGaP, InGaAs, AND InAIAl

Pearton, S. J. ; Kuo, J. M. ; Hobson, W. S. ; Hailemarian, E. ; Ren, F. ; Katz, A. ; Perley, A. P.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.797-804, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

5. P-TYPE QUANTUM WELL INFRARED PHOTODETECTORS GROWN BY OMVPE

Hobson, W. S. ; Zussman, A. ; De Jong, J. ; Levine, B. F.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.569-574, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

6. CARBON DOPING OF GaAs BY OMVPE USING CCL: A COMPARISON OF GALLIUM AND ARSENIC PRECURSORS

Hobson, W. S.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.45-50, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

7. USE OF SELECTIVE AREA DEFECT CREATION FOR ISOLATION OF III-V MULTILAYER STRUCTURES

Pearton, S. J. ; Ren, F. ; Fullowan, T. R, ; Katz, A. ; Hobson, W. S. ; Abernaty, C. R. ; Lothian, J., R. ; D'Asaro, L. A. ; Elliman, R. G. ; Ridgway, M. C. ; Jagadish, C. ; Williams,. J. S.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.763-768, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

8. *HYDROGEN PASSIVATION OF GaAs:C EPITAXIAL LAYERS GROWN FROM METALORGANIC SOURCES

Stavola, Michael ; Kozuch, D. M. ; Abernathy, C. R. ; Hobson, W. S.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.75-86, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

9. HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS

Pearton, S. J. ; Chakrabarti, U. K. ; Katz, A. ; Ren, F. ; Fullowan, T. R. ; Abernathy, C R. ; Hobson, W. S.

Pub. info.:	Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A.. pp.17-22, 1992. Pittsburgh, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	268

10.

Conference Proceedings

10. In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS

Ren, F. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Emerson, A. B. ; Yanof, A. W. ; Schleich, D. M.

Pub. info.:	Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.. pp.481-486, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	181

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