1.

Conference Proceedings
Conference Proceedings
1. Impact of High-k Properties on MOSFET Electrical Characteristics
Pantisano, Ll. ; Ragnarsson, L. -A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; Degendt, S. ; Heyns, M. ; Afanas'ev, V.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.97-109,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
2.

Conference Proceedings
Conference Proceedings
2. MODELLING OF CRYSTAL ORIGINATED PARTICLES AND THEIR IMPACT ON GATE OXIDE INTEGRITY
Bearda, T. ; Mertens, P.W. ; Woerlee, P.H. ; Wallinga, H. ; Sebmolke, R. ; Heyns, M.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.528-539,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
3.

Conference Proceedings
Conference Proceedings
3. EVALUATION OF MEGASONIC CLEANING SYSTEMS FOR PARTICLE REMOVAL EFFICIENCY AND DAMAGING
Vereecke, G. ; Holsteyns, F. ; Veltens, J. ; Lux, M. ; Amauts, S. ; Kenis, K. ; Vos, R. ; Mertens, P. ; Heyns, M.
Pub. info.: Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium.  pp.145-152,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-26
4.

Conference Proceedings
Conference Proceedings
4. MECHANISMS OF PARTICLE REMOVAL DURING BRUSH SCRUBBER CLEANING
Xu, K. ; Vos, R. ; Vereecke, G. ; Mertens, P. ; Heyns, M. ; Vinckier, C. ; Fransaer, J.
Pub. info.: Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium.  pp.137-144,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-26
5.

Conference Proceedings
Conference Proceedings
5. 45. TaN metal gate MOSFETs with aggressively scaled HfO2 dielectrics
Lander, R. ; Schram, T. ; Lulan, G.S. ; hooker, J. ; Vertommen, J. ; Lee, S. ; de Weerd, W. ; Boullart, W. ; van Elshocht, S ; Carter, R. ; Kubicek, S. ; Demeyer, K. ; De Gendt, S. ; Heyns, M.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.367-374,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
6.

Conference Proceedings
Conference Proceedings
6. 16 Properties of HfTaxOy High-K Layers Deposited by ALCVD
Zhao, C. ; Rittersma, Z. M. ; Van Berkum, J. G. M. ; Snijders, J. H. M. ; Hendriks, A. ; Breimer, P. ; Groat, P. ; Maes, J. W. ; Wittesr, H. ; Afanas'ev, V. V. ; Tois, E. ; Tuominen, M. ; Caymax, M. ; De Gendt, S. ; Heyns, M.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.133-140,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
7.

Conference Proceedings
Conference Proceedings
7. High-k Dielectrics Integration Prospects (Invited paper)
Kubicek, S. ; Van Elshocht, S. ; Delabie, A. ; Yamamoto, K. ; Beckx, S. ; Claes, M. ; Van Hoornick, N. ; Kwak, D.-H. ; Hyun, S. ; Rothschild, A. ; Veloso, A. ; Anil, K. ; Lujan, G. ; Kittle, J.A. ; Lauwers, A. ; Kaushik, V. ; Niwa, M. ; De Gendt, S. ; Heyns, M. ; Jurczak, M. ; Biesemans, S.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.169-192,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
8.

Conference Proceedings
Conference Proceedings
8. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
9.

Conference Proceedings
Conference Proceedings
9. INTEGRATION OF HIGH-k GATE DIELECTRICS - WET ETCH CLEANING AND SURFACE CONDITIONING
De Gendt, S. ; Beckx, S. ; Caymax, M. ; Claes, M. ; Conard, T. ; Delabie, A. ; Deweerd, W. ; Hellin, D. ; Kraus, H. ; Onsia, B. ; Parishev, V. ; Puurunen, R. ; Rohr, E. ; Snow, J. ; Tsai, W. ; Van Doome, P. ; Van Elshocht, S. ; Vertommen, J. ; Witters, T. ; Heyns, M.
Pub. info.: Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium.  pp.67-77,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-26
10.

Conference Proceedings
Conference Proceedings
10. Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications
Kaushik, V. ; De Gendt, S. ; Caymax, M. ; Young, E. ; Rohr, E. ; Van Elshocht, S. ; Delabie, A. ; Claes, M. ; Shi, X. ; Chen, I. ; Carter, R. ; Conard, T. ; Vandervorst, W. ; Schaekers, M. ; Heyns, M.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.391-396,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-6