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16 results

Conference Proceedings

1. Optically Detected Cyclotron Resonance for Defect Characterization

Godlewski,M. ; Chen,W.M. ; Monemar,B.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1353-1358, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

2. On the origin of yellow donor-acceptor pair emission iu GaN

Godlewski,M. ; Ivanov,V.Yu. ; Kaminska,A. ; Zuo,H.Y. ; Goldys,E.M. ; Tansley,T.L. ; Barski,A. ; Rossner,U. ; Rouvicre,J.L. ; Arlery,M. ; Grzegory,I. ; Suski,T. ; Porowski,S. ; Bergman,J.P.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1149-1154, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

3. Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon(100)Substrates

Godlewski,M. ; Ivanov,V.Yu. ; Bergman,J.P. ; Monemar,B. ; Barski,A. ; Langer,R.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1343-1346, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

4. Recombination Dynamics of Unthermalised Excitons in Quantum Well Structures of II-VI Semiconductors

Godlewski,M.

Pub. info.:	Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), held in Vilnius, Lithuania, August/September, 1998. pp.197-204, 1999. Zurich-Uetikon, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	297-298

Conference Proceedings

5. Dynamics of Microwave Induced Changes of Photoluminescence of 2D Carriers in Modulation Doped Structures of GaAs/AlGaAs

Godlewski,M. ; Khachepuridze,A. ; Ivanov,V.Yu.

Pub. info.:	Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), held in Vilnius, Lithuania, August/September, 1998. pp.229-232, 1999. Zurich-Uetikon, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	297-298

Conference Proceedings

6. Energy States of Ni and Band Offsets in Zn1-xCdxSe(Ni)and ZnSxSe1-x(Ni)Alloys

Surkova,T.P. ; Giriat,W. ; Godlewski,M. ; Kaczor,P. ; Surma,M. ; Permogorov,S.A. ; Tenishev,L.N.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.749-754, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

7. Exciton-Phonon Interaction in Quantum Well Structures of CdTe/CdMnTe and CdMnTe/CdMgTe

Narkowicz,R. ; Godlewski,M.

Pub. info.:	Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), held in Vilnius, Lithuania, August/September, 1998. pp.245-248, 1999. Zurich-Uetikon, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	297-298

Conference Proceedings

8. A New Bistable Shallow Thermal Donor in Al-Doped Si

Kaczor,P. ; Godlewski,M. ; Gregorkiewicz,T.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1185-1190, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

9. Iron and Nickel as Centers of Nonradiative Recombination in ZnS and ZnSe

Surma,M. ; Zakrzewski,A.J. ; Godlewski,M.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.761-766, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

10.

Conference Proceedings

10. Auger type nonradiative recombination processes in bulk and quantum well structures of II-VI semiconductors containing transition metal ions

Godlewski,M. ; Surma,M. ; Zakrewski,A.J. ; Wojtowicz,T. ; Karczewski,G. ; Kossut,J. ; Bergman,J.P. ; Monemar,B.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part3 pp.1677-1682, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

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