1.

Conference Proceedings
Conference Proceedings
1. Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism
K.K. Lee ; G. Pensl ; M. Soueidan ; G. Ferro
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.505-508,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
T. Frank ; S. Beljakowa ; G. Pensl ; T. Kimoto ; V. Afanas'ev
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.555-560,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. Selenium and Tellurium Double Donors in SiC
S.A. Reshanov ; H.B. Weber ; G. Pensl ; A. Schoener ; H. Nagasawa
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.607-610,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
4.

Conference Proceedings
Conference Proceedings
4. 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3
S. Beljakowa ; T. Frank ; G. Pensl ; K.Y. Gao ; F. Speck ; T. Seyller
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.627-630,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
5.

Conference Proceedings
Conference Proceedings
5. Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS
B. Zippelius ; M. Krieger ; H.B. Weber ; G. Pensl ; B. Kallinger
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.393-396,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
6.

Conference Proceedings
Conference Proceedings
6. Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays
S. Hishiki ; S.A. Reshanov ; T. Ohshima ; H. Itoh ; G. Pensl
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.703-706,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
7.

Conference Proceedings
Conference Proceedings
7. Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy
S. Beljakowa ; M. Krieger ; T. Frank ; G. Pensl ; L. Trapaidze
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.727-730,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
8.

Conference Proceedings
Conference Proceedings
8. Lifetime Investigations of 4H-SiC PiN Power Diodes
S.A. Reshanov ; W. Bartsch ; B. Zippelius ; G. Pensl
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.699-702,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
9.

Conference Proceedings
Conference Proceedings
9. Ionization Energies of Phosphorus Donors in 6H-SiC
F. Schmid ; K. Semmelroth ; M. Krieger ; H.B. Weber ; G. Pensl
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.441-444,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
10.

Conference Proceedings
Conference Proceedings
10. Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
S.A. Reshanov ; G. Pensl ; K. Danno ; T. Kimoto ; S. Hishiki
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.417-420,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603