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10 results

Conference Proceedings

1. Al⁺ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

R. Nipoti ; A. Hallén ; A. Parisini ; F. Moscatelli ; S. Vantaggio

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.767-772, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC

R. Nipoti ; F. Moscatelli ; A. Roncaglia ; F. Bonafè ; F. Mancarella

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.620-623, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

3. Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC

R. Nipoti ; F. Mancarella ; F. Moscatelli ; R. Rizzoli ; S. Zampolli

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.504-507, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

4. Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers

R. Nipoti ; A. Nath ; Y.L. Tian ; F. Tamarri ; F. Moscatelli

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.985-988, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

5. The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface

I. Pintilie ; F. Moscatelli ; R. Nipoti ; A. Poggi ; S. Solmi

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.326-329, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

6. Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States

I. Pintilie ; F. Moscatelli ; R. Nipoti ; A. Poggi ; S. Solmi

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.346-349, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

7. Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

F. Moscatelli ; A. Poggi ; S. Solmi ; R. Nipoti ; A. Armigliato

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.491-494, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

8. Al⁺ Implanted 4H-SiC p⁺-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

U. Grossner ; F. Moscatelli ; R. Nipoti

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.657-660, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

9. Passivation by N Implantation of the SiO₂/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

A. Poggi ; F. Moscatelli ; S. Solmi ; R. Nipoti

Pub. info.:	Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California. pp.201-206, 2010. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	1246

10.

Conference Proceedings

10. Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC

P. Fedeli ; M. Puzzanghera ; F. Moscatelli ; R.A. Minamisawa ; G. Alfieri ; U. Grossner ; R. Nipoti

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.391-394, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

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