Blank Cover Image

Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC

Author(s):
Publication title:
Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
Title of ser.:
Materials science forum
Ser. no.:
821-823
Pub. Year:
2015
Page(from):
620
Page(to):
623
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

U. Grossner, F. Moscatelli, R. Nipoti

Trans Tech Publications
7 Conference Proceedings Electrical Characterization of Ion-Implanted n+/p 6H-SiC Diodes

Poggi, A., Nipoti, R., Cardinali, G.C., Moscatelli, F.

Trans Tech Publications
2 Conference Proceedings Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC

R. Nipoti, F. Mancarella, F. Moscatelli, R. Rizzoli, S. Zampolli

Trans Tech Publications
8 Conference Proceedings Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, S. Cristiani

Trans Tech Publications
3 Conference Proceedings C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+n 4H-SiC Diodes

F. Fabbri, F. Moscatelli, A. Poggi, R. Nipoti, A. Cavallini

Trans Tech Publications
9 Conference Proceedings Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti, A. Armigliato

Trans Tech Publications
4 Conference Proceedings High Dose Al+ Implanted and Microwave Annealed 4H-SiC

R. Nipoti, A. Nath, M.V. Rao, A. Hallén, F. Mancarella

Trans Tech Publications
10 Conference Proceedings n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature

Canino, M., Castaldini, A., Cavallini, A., Moscatelli, F., Nipoti, R., Poggi, A.

Trans Tech Publications
5 Conference Proceedings Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers

R. Nipoti, A. Nath, Y.L. Tian, F. Tamarri, F. Moscatelli

Trans Tech Publications
11 Conference Proceedings Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC

Scorzoni, A., Moscatelli, F., Poggi, A., Cardinali, G.C., Nipoti, R.

Trans Tech Publications
6 Conference Proceedings Al+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

R. Nipoti, A. Hallén, A. Parisini, F. Moscatelli, S. Vantaggio

Trans Tech Publications
12 Conference Proceedings Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes

R. Nipoti, M. Puzzanghera, G. Sozzi

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12