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16 results

Conference Proceedings

1. *Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates

Davis, R. F. ; Gehrke, T. ; Linthicum, K. J. ; Zheleva, T. S. ; Rajagopal, P. ; Zorman, C. A. ; Mehregany, M.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W2.1.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

2. Photoluminescence characterization of Mg implanted GaN

Ronning, C. ; Hofsass, H. C. ; Stotzler, A. ; Deicher, M. ; Carlson, E. P. ; Hartlieb, P. J. ; Gehrke, T. ; Rajagopal, P. ; Davis, R. F.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.44.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

3. Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures

Michel, A. ; Hanser, D. ; Davis, R. F. ; Qiao, D. ; Lau, S. S. ; Yu, L. S. ; Sun, W. ; Asbeck, P.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.8.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

4. Optical properties and defect structure of MOVPE InGaN films

Cremades, A. ; Albrecht, M. ; Ulloa, J. M. ; Piqueras, J. ; Strunk, H. P. ; Hanser, D. ; Davis, R. F.

Pub. info.:	Optical microstructural characterization of semiconductors : sympoisum held November 29-30, 1999, Boston, Massachusetts, U.S.A.. pp.81-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	588

Conference Proceedings

5. Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy

Barabash, R. I. ; Ice, G. E. ; Liu, W. ; Einfeldt, S. ; Hommel, D. ; Roskowski, A. M. ; Davis, R. F.

Pub. info.:	Thin films : stresses and mechanical properties XI : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.. pp.115-120, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	875

Conference Proceedings

6. Relationship of Basal Plane and Prismatic Stacking Faults in GaN to Low Temperature Photoluminescence Peaks at 〜3.4 eV and 〜3.2 eV

Bai, J. ; Dudley, M. ; Chen, L. ; Skromme, B. J. ; Hartlieb, P. J. ; Michaels, E. ; Kolis, J. W. ; Wagner, B. ; Davis, R. F. ; Chowdhury, U. ; Dupuis, R. D.

Pub. info.:	GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.. pp.721-726, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	831

Conference Proceedings

7. Initial Stages of Growth of Gallium Nitride via Iodine Vapor Phase Epitaxy

Mecouch, W. J. ; Rodriguez, B. J. ; Reitmeier, Z. J. ; Park, J-S. ; Davis, R. F. ; Sitar, Z.

Pub. info.:	GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.. pp.185-190, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	831

Conference Proceedings

8. SiC MISFETs With MBE-grown AIN Gate Dielectric

Zetterling, C. -M. ; Ostling, M. ; Yano, H. ; Kimoto, T. ; Matsunami, H. ; Linthicum, K. ; Davis, R. F.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1315-1318, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

9. Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process

Danielsson, E. ; Zetterling, C. -M. ; Ostling, M. ; Lee, S. K. ; Linthicum, K. ; Thomson, D. B. ; Nam, O. -H. ; Davis, R. F.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1049-1052, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

10.

Conference Proceedings

10. Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN

Suvkhanov, A. ; Parikh, N. ; Usov, I. ; Hunn, J. ; Withrow, S. ; Thomson, D. ; Gehrke, T. ; Davis, R. F. ; Krasnobaev, L. Ya.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1615-1618, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

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