1.

Conference Proceedings
Conference Proceedings
1. Impact of the Schottky contacts on characterization of ultra-thin SOI pseudo-MOS transistors
Sato, S. ; Komiya, K. ; Bresson, N. ; Omura, Y. ; Cristoloveanu, S.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.249-254,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
2.

Conference Proceedings
Conference Proceedings
2. Meta-stable dip (MSD) effect in fully-depleted SOI CMOSFETs
Bawedin, M. ; Yun, J.G. ; Cristoloveanu, S. ; Lee, H.D. ; Raynaud, C. ; Flandre, D.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.51-56,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
3.

Conference Proceedings
Conference Proceedings
3. Total-dose radiation hardness of the SOI 4-gate transistor (G4-FET)
Akarvardar, K. ; Cristoloveanu, S. ; Schrimpf, R.D. ; Dufrene, B. ; Gentil, P. ; Blalock, B.J. ; Mojarradi, M.M.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.99-106,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
4.

Conference Proceedings
Conference Proceedings
4. ALD alumina films as buried dielectric layers for SOI structures
de Beaumont, C. ; Moriceau, H. ; Rayssac, O. ; Bresson, N. ; Cristoloveanu, S. ; Charvet, A.M.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.231-236,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
5.

Conference Proceedings
Conference Proceedings
5. Corner and coupling effects in multiple-gate FETs
Ritzenthaler, R. ; Faynot, O. ; Jahan, C. ; Cristoloveanu, S.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.283-288,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
6.

Conference Proceedings
Conference Proceedings
6. Effects of etching processes on the properties of pseudo-MOSFETs for the UTSOI characterization
Bae, Y.-H. ; Kwon, K.-W. ; Lee, J.-H. ; Woo, H.-J. ; Cristoloveanu, S.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.295-300,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
7.

Conference Proceedings
Conference Proceedings
7. Adaptation of Ψ-MOSFET techniques for ultra thin SOI
Bresson, N. ; Allibert, F. ; Cristoloveanu, S.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.317-324,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
8.

Conference Proceedings
Conference Proceedings
8. Short-channel, narrow channel, and ultra-thin oxide effects in advanced SOI MOSFETs
Zaouia, S. ; Goktepeli, S. ; Perera, A.H. ; Cristoloveanu, S.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.309-316,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
9.

Conference Proceedings
Conference Proceedings
9. Review of radiation effects in single- and multiple-gate SOI MOSFETs
Cristoloveanu, S.
Pub. info.: Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment.  pp.197-214,  2005.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 185