1.

Conference Proceedings
Conference Proceedings
1. TEMPERATURE DEPENDENCE OF THE KINETICS OF SILICON AMORPHIZATION BY He ION IMPLANTATION
Laanab, L. ; Roumili, A. ; Faye, M.M. ; Gessinn, N. ; Claverie, A.
Pub. info.: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.529-534,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 279
2.

Conference Proceedings
Conference Proceedings
2. TWO-DIMENSIONAL DAMAGE DISTRIBUTIONS INDUCED BY LOCALIZED ION IMPLANTATIONS
Faye, M.M. ; Laanab, L. ; Beauvillain, J. ; Claverie, A. ; Vieu, C. ; Benassayag, G.
Pub. info.: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.783-788,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 283
3.

Conference Proceedings
Conference Proceedings
3. Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon
Cowern, N.E.B. ; Mannino, G. ; Roozeboom, F. ; Stalk, P.A. ; Huizing, H.G.A. ; van Berkum, J.G.M ; Toan, N.N. ; Woerlee, P.H. ; Cristiano, F. ; Claverie, A.
Pub. info.: Advances in rapid thermal processing : proceedings of the symposium.  pp.125-132,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-10
4.

Conference Proceedings
Conference Proceedings
4. TEM AND HREM STUDIES OF AS-GROWN LOW-TEMPERATURE MOLECULAR BEAM EPITAXIAL In0.52Al0.48As/InP HETEROLAYERS
Claverie, A. ; Liliental-Weber, Z. ; Werner, P. ; Swider, W. ; Bhattacharya, P.K. ; Gupta, S. ; Mourou, G.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.289-294,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
5.

Conference Proceedings
Conference Proceedings
5. ON THE AMORPHIZATION OF SILICON BY LIGHT ION IMPLANTATION: ION FLUX AND SUBSTRATE TEMPERATURE EFFECTS
Claverie, A. ; Roumili, A. ; Gessinn, N. ; Beauvillain, J.
Pub. info.: Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.369-374,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 201
6.

Conference Proceedings
Conference Proceedings
6. THE EARLY STAGE OF SILICON OXIDATION BY RAPID THERMAL PROCESSING: INFLUENCE OF SEVERAL PARAMETERS ON THE GROWTH KINETICS
Yahia-Messaoud, A. ; Sarrabayrouse, G. ; Claverie, A. ; Martinez, A. ; Scheid, E. ; Campo, E. ; faye, M.
Pub. info.: Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.391-396,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 224
7.

Conference Proceedings
Conference Proceedings
7. POINT DEFECT INJECTION IN SILICON DURING THIN OXIDE FORMATION
Skarlatos, D. ; Omri, M. ; Tsamis, C. ; Claverie, A. ; Tsoukalas, D.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.914-925,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
8.

Conference Proceedings
Conference Proceedings
8. A CONTINUOUS HETEROGENEOUS MODEL FOR THE CRYSTALLINE TO AMORPHOUS TRANSITION IN ION IMPLANTED SEMICONDUCTORS:RELATIONSHIP TO THE “CRITICAL DAMAGE ENERGY DENSITY” MODEL
Vieu, C. ; Claverie, A. ; Faure, J. ; Beauvillain, J.
Pub. info.: Phase transformation kinetics in thin films : symposium held April 29-May 1, 1991, Anaheim, California, U.S.A..  pp.165-170,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 230
9.

Conference Proceedings
Conference Proceedings
9. A MODEL TO EXPLAIN THE VARIATIONS OF “END-OF-RANGE" DEFECT DENSITIES WITH ION IMPLANTATION PARAMETERS
Laanab, L. ; Bergaud, C. ; Faye, M.M. ; Faure, J. ; Martinez, A. ; Claverie, A.
Pub. info.: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.381-386,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 279
10.

Conference Proceedings
Conference Proceedings
10. Direct Wafer Bonding of Preamorphized Silicon Wafers
Laporte, A. ; Sarrabayrouse, G. ; Benamara, M. ; Claverie, A. ; Rocher, A. ; Lescouzeres, L. ; PeyreLavigne, A.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.869-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378