1.

Conference Proceedings
Conference Proceedings
1. Processing and device performance of GaN power rectifiers
Zhang, A. P. ; Dang, G. T. ; Cao, X. A. ; Cho, H. ; Ren, F. ; Han, J. ; Chyi, J-I. ; Lee, C-M. ; Nee, T-E. ; Chuo, C-C. ; Chi, G-C. ; Chu, S. N. G. ; Wilson, R. G. ; Pearton, S. J.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.67.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
2.

Conference Proceedings
Conference Proceedings
2. Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs
Lee, K.P. ; Zhang, A. P. ; Dang, G. ; Ren, F. ; Han, J. ; Chu, S. N. G. ; Hobson, W. S. ; Lopata, J. ; Abernathy, C. R. ; Pearton, S.J. ; Lee, J. W.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
3.

Conference Proceedings
Conference Proceedings
3. Temperature Dependent Performance of GaN Schottky Diode Rectifiers
Cao, X. A. ; Dang, G. T. ; Zhang, A. P. ; Ren, F. ; Pearton, S. J. ; Lee, C. -M. ; Chuo, C. -C. ; Chyi, J. -I. ; Chi, G. C. ; Han, J. ; Chu, S. N. G. ; Wilson, R. G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1631-1634,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. Processing of Very Low Dark Current High Speed Infrared Photodetectors for Telecommunication Applications
Mehandru, R. ; Luo, B. ; Ren, F. ; Shen, P. ; Aliberti, K. ; Chu, S. N. G. ; Lothian, J. R. ; Pearton, S. J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.166-173,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14
5.

Conference Proceedings
Conference Proceedings
5. High-quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
Nikishin, S. A. ; Faleev, N. N. ; Antipov, V. G. ; Francoeur, S. ; Peralta, L. Grave de ; Seryogin, G. A. ; Holtz, M. ; Prokofyeva, T. I. ; Chu, S. N. G. ; Zubrilov, A. S. ; Elyukhin, V. A. ; Nikitina, I. P. ; Nikolaev, A. ; Melnik, Y. ; Dmitriev, V. ; Temkin, H.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W8.3.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595