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Thin Film Transistors With Electron Mobility Of 40 cm2V-1s-1 Made From Directly Deposited Intrinsic Microcrystalline Silicon

Author(s):
Publication title:
Amorphous and heterogeneous silicon thin films - 2000 : symposium held April 24-28, 2000, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
609
Pub. Year:
2001
Page(from):
A31.2
Pub. info.:
Warrendale: Materials Research Society
ISSN:
02729172
ISBN:
9781558995178 [155899517X]
Language:
English
Call no.:
M23500/609
Type:
Conference Proceedings

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