1.

Conference Proceedings
Conference Proceedings
1. Analysis of Junctions Formed in Strained Si/SiGe Substrates
Eneman, G. ; Simoen, E. ; Lauwers, A. ; Lindsay, R. ; Verheyen, P. ; Delhougne, R. ; Loo, R. ; Caymax, M. ; Meunier-Beillard, P. ; Demuynck, S. ; Meyer, K.De ; Vandervorst, W.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.187-192,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
2.

Conference Proceedings
Conference Proceedings
2. 34 Improving CMOS performance by AVD〓 grown high-k dielectrics and advanced metal electrodes
Weber, U. ; Boissiere, O. ; Lindner, J. ; Schumacher, M. ; Lehnen, P. ; Manke, C. ; Van Elshocht, S. ; Caymax, M. ; Cosnier, V. ; McEntee, T.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.293-300,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
3.

Conference Proceedings
Conference Proceedings
3. 16 Properties of HfTaxOy High-K Layers Deposited by ALCVD
Zhao, C. ; Rittersma, Z. M. ; Van Berkum, J. G. M. ; Snijders, J. H. M. ; Hendriks, A. ; Breimer, P. ; Groat, P. ; Maes, J. W. ; Wittesr, H. ; Afanas'ev, V. V. ; Tois, E. ; Tuominen, M. ; Caymax, M. ; De Gendt, S. ; Heyns, M.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.133-140,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
4.

Conference Proceedings
Conference Proceedings
4. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
5.

Conference Proceedings
Conference Proceedings
5. INTEGRATION OF HIGH-k GATE DIELECTRICS - WET ETCH CLEANING AND SURFACE CONDITIONING
De Gendt, S. ; Beckx, S. ; Caymax, M. ; Claes, M. ; Conard, T. ; Delabie, A. ; Deweerd, W. ; Hellin, D. ; Kraus, H. ; Onsia, B. ; Parishev, V. ; Puurunen, R. ; Rohr, E. ; Snow, J. ; Tsai, W. ; Van Doome, P. ; Van Elshocht, S. ; Vertommen, J. ; Witters, T. ; Heyns, M.
Pub. info.: Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium.  pp.67-77,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-26
6.

Conference Proceedings
Conference Proceedings
6. Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications
Kaushik, V. ; De Gendt, S. ; Caymax, M. ; Young, E. ; Rohr, E. ; Van Elshocht, S. ; Delabie, A. ; Claes, M. ; Shi, X. ; Chen, I. ; Carter, R. ; Conard, T. ; Vandervorst, W. ; Schaekers, M. ; Heyns, M.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.391-396,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-6
7.

Conference Proceedings
Conference Proceedings
7. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.281-286,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
8.

Conference Proceedings
Conference Proceedings
8. Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD
Elshocht, S.Van ; Brijs, B. ; Caymax, M. ; Conard, T. ; Gendt, S.De ; Kubicek, S. ; Meuris, M. ; Onsia, B. ; Richard, O. ; Teerlinck, I. ; Steenbergen, J.Van ; Zhao, C. ; Heyns, M.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.287-292,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
9.

Conference Proceedings
Conference Proceedings
9. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.273-280,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
10.

Conference Proceedings
Conference Proceedings
10. The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.423-430,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810