1.

Conference Proceedings
Conference Proceedings
1. OPTICAL SPECTROSCOPY OF DEFECTS IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS
Monemar, B. ; Holtz, P. O. ; Bergman, J. P. ; Zhao, Q. X. ; Harris, C. I. ; Ferreira, A. C. ; Sundaram, M. ; Merz, J. L. ; Gossard, A. C.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.19-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
2.

Conference Proceedings
Conference Proceedings
2. Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures
Monemar, B. ; Bergman, J. P. ; Dalfors, J. ; Pozina, G. ; Sernelius, B. E. ; Holtz, P. O. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G2.5.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
3.

Conference Proceedings
Conference Proceedings
3. Luminescence of a New Material: GaN Grown on NdGaO3
Korona, K. P. ; Pakula, K. ; Wysmolek, A. ; Baranowski, J. M. ; Bergman, J. P. ; Monemar, B. ; Lukasiewicz, T. ; Luczynski, Z.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.725-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
4.

Conference Proceedings
Conference Proceedings
4. Electronic Structure and Temperature Dependence of Excitons in GaN
Buyanova, I. A. ; Bergman, J. P. ; Li, W. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.675-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
5.

Conference Proceedings
Conference Proceedings
5. Exciton Lifetimes in GaN
Bergman, J. P. ; Harris, C. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.709-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
6.

Conference Proceedings
Conference Proceedings
6. Interactions of LO Phonons With Bound Excitons in Homoepitaxial GaN
Korona, K. P. ; Wysmolek, A. ; Baranowski, J. M. ; Pakula, K. ; Bergman, J. P. ; Monemar, B. ; Grzegory, I. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.501-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
7.

Conference Proceedings
Conference Proceedings
7. Evidence of Potential Fluctuations in Modulation-Doped GaN/AlGaN Heterostructures
Buyanov, A. V. ; Sandberg, J. ; Bergman, J. P. ; Sernelius, B. E. ; Holtz, P-O. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.585-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
8.

Conference Proceedings
Conference Proceedings
8. Optical Properties of InGaN/GaN Multiquantum-Well Structures
Bergman, J. P. ; Saksulv, N. ; Dalfors, J. ; Holtz, P. O. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.631-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
9.

Conference Proceedings
Conference Proceedings
9. Photoluminescence Related to the 2-Dimensional Electron Gas in Modulation Doped GaN/AlGaN Structures
Bergman, J. P. ; Lundstrom, T. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.595-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395