1.

Conference Proceedings
Conference Proceedings
1. The Search for Cathode and Anode Traps in High-Voltage Stressed Sillicon Oxides
Chen, L. ; Kang, C.S. ; Oralkan, O. ; Dumin, D.J. ; Brown, G.A. ; Bellutti, P.
Pub. info.: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.88-98,  1997.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-10
2.

Conference Proceedings
Conference Proceedings
2. MOS C-t characteristics and gate oxide quality versus bulk iron contamination in epitaxial wafers
Bellutti, P. ; Collini, A. ; Zorzi, N. ; Vaccari, G. ; Crippa, D.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.209-217,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
3.

Conference Proceedings
Conference Proceedings
3. Gate oxide quality improvement nearby bird's beak region
Bellutti, P. ; Collini, A. ; Ferrario, L. ; Zorzi, N ; Zen, M.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.204-208,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
4.

Conference Proceedings
Conference Proceedings
4. Minority Carrier Diffusion Length Changes in Si Substrate Due to a High Temperature Annealing
Bellutti, P. ; Calderara, M. ; Porrini, M. ; Cornara, M. ; Olmo, M.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.304-312,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
5.

Conference Proceedings
Conference Proceedings
5. On the Improving of the Gate Oxide Reliability
Bellutti, P. ; Boscardin, M. ; Zen, M. ; Zorzi, N.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.635-644,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
6.

Conference Proceedings
Conference Proceedings
6. Interstitial Oxygen Concentration Role in the DW-LOCOS CMOS Technology
Bellutti, P. ; Boscardin, M. ; Zen, M. ; Zordi, N. ; Vrtacnik, D. ; Calderara, M. ; Soncini, G.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.338-344,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13