1.

Conference Proceedings
Conference Proceedings
1. GaN Power Devices
Pearton, S.J. ; Ren, F. ; Zhang, A.P. ; Dang, G. ; Cac, X.A. ; Lee, K.P. ; Cho, H. ; Gila, B.P. ; Johnson, J.W. ; Monier, C. ; Abernathy, C.R. ; Han, J. ; Baca, A.G. ; Chyi, J.-I. ; Lee, C.-M. ; Nee, T.-E. ; Chuo, C.-C. ; Chi, G.C. ; Chu, S.N.G.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.99-113,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
2.

Conference Proceedings
Conference Proceedings
2. Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors
Li, N.Y ; Chang, P C. ; Baca, A.G. ; Laroche, J.R. ; Ren, F ; Annou, E. ; Sharps, P R. ; Hou, H.Q.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.69-81,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
3.

Conference Proceedings
Conference Proceedings
3. Non-Crystallographic Wet Etching of Gallium Arsenide
Baca, A.G. ; Laroche, J.R. ; Chang, P.C. ; Ren, F.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.15-21,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
4.

Conference Proceedings
Conference Proceedings
4. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Chang, P.C. ; Li, N.Y. ; Baca, A.G. ; Monie, C. ; Larnche, J.R. ; Hou, H.Q. ; Ren, F ; Pearton, S.J.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.192-197,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
5.

Conference Proceedings
Conference Proceedings
5. AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances
Monier, C. ; Baca, A.G. ; Pearton, S.J. ; Ren, F. ; Chang, P.C. ; Zhang, L. ; LaRoche, J.R. ; Han, J. ; Shut, R.J.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.34-42,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
6.

Conference Proceedings
Conference Proceedings
6. DC and Microwave Characteristics of 100 V GaAs/AlGaAs HBTs
Baca, A.G. ; Chang, P.C. ; Klem, J.F. ; Ashby, C.I.H. ; Martin, D.C.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.128-138,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
7.

Conference Proceedings
Conference Proceedings
7. Annealing Behavior of Ar Implanted GaN
Luo, B. ; Johnson, J.W. ; Ren, F. ; Allums, K.K. ; Abernathy, C.R. ; Pearton, S.J. ; Dwivedi, R. ; Fogarty, TN ; Wilkins, R. ; Dabiran, A.M ; Wowchack, A.M. ; Polley, C.J. ; Chow, P.P. ; Baca, A.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.198-206,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
8.

Conference Proceedings
Conference Proceedings
8. Device Characteristics of the PnP AlGaAs/InGaAsN/GaAs Double Heterojunction Bipolar Transistor
Chang, P.C. ; Li, N.Y. ; Laroche, J.R. ; Baca, A.G. ; Hou, H.Q. ; Ren, F.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.305-312,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
9.

Conference Proceedings
Conference Proceedings
9. Design Investigation of InGaAsN-based Pnp Heteroj unction Bipolar Transistors *
Monier, C. ; Chang, P.C. ; Baca, A.G. ; Li, N.Y. ; Larache, J.R. ; Hou, H.Q. ; Ren, F. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.293-299,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
10.

Conference Proceedings
Conference Proceedings
10. Orientation and Dielectric Overlayer Effects in InGaP/GaAs HBTs *
Baca, A.G. ; Monier, C. ; Chang, P.C. ; Armendariz, M.G. ; Briggs, R.D. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.300-304,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1