1.

Conference Proceedings
Conference Proceedings
1. Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP Applications
Chang, P.C. ; Baca, A.G. ; Klem, J.F. ; Hafich, M.J. ; Ashby, C.I.H. ; Hietala, V.M.
Pub. info.: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium.  pp.177-184,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-17
2.

Conference Proceedings
Conference Proceedings
2. GaN Metal Oxide Semiconductor Field Effect Transistors
Ren, F. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Cheng, P. ; Han, J. ; Shul, R.J. ; Chu, S.N.G. ; Hong, M. ; Lothian, J.R.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.169-173,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
3.

Conference Proceedings
Conference Proceedings
3. GaAs Self-Aligned JFETs with Carbon-Doped p+ Region
Baca, A.G. ; Chang, P.-C. ; Allerman, A.A. ; Drummond, T.J.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.155-160,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
4.

Conference Proceedings
Conference Proceedings
4. *Temperature Effect of Metal contacts on GaN
Ren, F. ; Chu, S.N.G. ; Lothian, J.R. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Han, J. ; Schurman, M.J. ; Hong, M. ; Cao, X.A. ; Gila, B.P. ; Ake, T.M.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.201-207,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
5.

Conference Proceedings
Conference Proceedings
5. Wet Oxidation of AlGaAs: Arsenic Barriers on the Road to MIS
Ashby, C.I.H. ; Sullivan, J.P. ; Newcomer, P.P. ; Missert, N.A. ; Hou, H.Q. ; Hammons, B.E. ; Baca, A.G.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.58-65,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
6.

Conference Proceedings
Conference Proceedings
6. 0.5 μm E/D AlGaAs/GaAs Heterostructure Field Effect Transistor Technology with DEFT Threshold Adjust Implant
Baca, A.G. ; Sherwin, M.E. ; Zolper, J.C. ; Shul, R.J. ; Briggs, R.D. ; Heise, J.A. ; Robertson, P.J. ; Hafich, M.F.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.186-189,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
7.

Conference Proceedings
Conference Proceedings
7. GaAs-Based JFET and PHEMT Technologies for Ultra-Low-Power Microwave Circuits Operating at Frequencies up to 2.4 GHz
Baca, A.G. ; Hietala, V.M. ; Greenway, D. ; Zolper, J.C. ; Sherwin, M.S. ; Shul, R.J. ; Hafich, M.J.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.443-449,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
8.

Conference Proceedings
Conference Proceedings
8. InGaAs/InP Heterojunction Bipolar Transistors for Ultra Low Power Circuit Applications
Chang, P.C. ; Baca, A.G. ; Hafich, M.J. ; Ashby, C.I.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.98-103,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
9.

Conference Proceedings
Conference Proceedings
9. High-density plasma-induced etch damage of GaN
Shul, R.J. ; Zhang, L. ; Baca, A.G. ; Willison, C.G. ; Han, J. ; Pearton, S.J. ; Ren, F. ; Zolper, J.C. ; Lester, L.F.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.271-280,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
10.

Conference Proceedings
Conference Proceedings
10. Complementary GaAs Junction-Gated Heterostructure Field Effect Transistor Fabrication for Integrated Circuits
Baca, A.G. ; Zolper, J.C. ; Sherwin, M.E. ; Robertson, P.J. ; Shul, R.J. ; Howard, A.J. ; Rieger, D.J. ; Klem, J.F.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.214-223,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34