Blank Cover Image

ION BEAM INDUCED INTERMIXING OF WSi0.45 oN GaAS

Author(s):
Publication title:
Processing and characterization of materials using ion beams : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
128
Pub. Year:
1989
Page(from):
249
Page(to):
254
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990012 [1558990011]
Language:
English
Call no.:
M23500/128
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings ACTIVATION AND INTERDIFFUSION CHARACTERISTICS IN IMPLANTED GaAs-A1GaAs HETEROSTRUCTURES ON Si

Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M.

Materials Research Society
7 Conference Proceedings ICP Etching of GaAs Via Hole Contacts

Shul, R.J., Baca, A.G., Briggs, R.D., McClellan, G.B., Pearton, S.J., Constantine, C.

Electrochemical Society
2 Conference Proceedings TEMPERATURE DEPENDENCE OF ETCH RATE AND RESIDUAL DAMAGE IN REACTIVELY ION ETCHED GaAs AND A1GaAs

Pearton, S.J., Jones, K.S., Chakabarti, U.K., Emerson, B., Lane, E., Vasile, M.J., Fullowan, T.R., Hobson, W.S., Short, …

Materials Research Society
8 Conference Proceedings III-Nitride ion implantation and device processing

Zolper, J.C., Shul, R.J., Baca, A.G., Pearton, S.J., Abernathy, C.R., Wilson, R.G., Stall, R.A., Shur, M.

Electrochemical Society
3 Conference Proceedings LATTICE-MATCHED GaAs/Ca0.45Sr0.55F2.Ge(100) HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY

Tu, C. W., Beggy, J. C., Baiocchi, F. A., Abys, S. M., Pearton, S. J., Hsieh, S. J., Kopf, R. F., Caruso, R., Jordan, A. …

Materials Research Society
9 Conference Proceedings AMORPHOUS WSi0.45 METALLIZATION FOR SELF-ALIGNED GaAs MESFETS

Lahav, Alex

Materials Research Society
4 Conference Proceedings GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD

Hobson, W.S., Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M., Jacobson, D.C., Abernathy, C.R., Caruso, R.

Materials Research Society
10 Conference Proceedings Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs

Shul, Randy J., Zhang, L., Baca, A.G., Willison, Christi G., Hans, J., Pearton, S.J., Lee, K.P., Ren, F.

Materials Research Society
5 Conference Proceedings ELEVATED TEMPERATURE REACTIVE ION ETCHING OF GaAs AND AlGaAs IN C2H6/H2

Pearton, S.J., Hobson, W.S., Jones, K.S.

Materials Research Society
11 Conference Proceedings Dry Etch Development of W/WSi Short Gate MESFETs

Shul, R.J., Sherwin, M.E., Baca, A.G., Zolper, J.C., Rieger, D.J., Briggs, R.D.

Electrochemical Society
6 Conference Proceedings Orientation and Dielectric Overlayer Effects in InGaP/GaAs HBTs *

Baca, A.G., Monier, C., Chang, P.C., Armendariz, M.G., Briggs, R.D., Pearton, S.J.

Electrochemical Society
12 Conference Proceedings ULTRA?THIN p+ LAYERS IN GaAs

Short, K.T., Chakrabarti, U.K., Pearton, S.J.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12