1.

Conference Proceedings
Conference Proceedings
1. Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures
Monemar,B. ; Bergman,J.P. ; Pozina,G. ; Dalfors,J. ; Sernelius,B.E. ; Holtz,P.O. ; Amano,H. ; Akasaki,I.
Pub. info.: Ultrafast phenomena in semiconductors III : 27-29 January, 1999, San Jose, California.  pp.168-178,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3624
2.

Conference Proceedings
Conference Proceedings
2. Room Temperature Photoluminescence Linewidth versus Material Quality of GaN
Monemar,B. ; Buyanova,I.A. ; Bergman,J.P. ; Amano,H. ; Akasaki,I.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1319-1322,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. ODMR Studies of MOVPE-Grown GaN Epitaxial Layers
Kunzer,M. ; Kaufmann,U. ; Maier,K. ; Schneider,J. ; Herres,N. ; Akasaki,I. ; Amano,H.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.87-92,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
4.

Conference Proceedings
Conference Proceedings
4. Characterization of Residual Transition Metal Ions in GaN and AlN
Baur,J. ; Kaufinann,U. ; Kunzer,M. ; Schneider,J. ; Amano,H. ; Akasaki,I. ; Detchprohm,T. ; Hiramatsu,K.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.55-60,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
5.

Conference Proceedings
Conference Proceedings
5. Iron Acceptors in Gallium Nitride(GaN)
Maier,K. ; Kunzer,M. ; Kaufmann,U. ; Schneider,J. ; Monemar,B. ; Akasaki,I. ; Amano,H.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.93-98,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
6.

Conference Proceedings
Conference Proceedings
6. Carrier Localization in Gallium Nitride
Wetzel,C. ; Walukiewicz,W. ; Haller,E.E. ; Ager,J.W.III ; Chen,A. ; Fischer,S. ; Yu,P.Y. ; Jeanloz,R. ; Grzegory,I. ; Porowski,S. ; Suski,T. ; Amano,H. ; Akasaki,I.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.31-36,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
7.

Conference Proceedings
Conference Proceedings
7. Heteroepitaxy of Group III Nitrides for Device Applications
Amano,H. ; Takeuchi,T. ; Sakai,H. ; Yamaguchi,S. ; Wetzel,C. ; Akasaki,I.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1115-1120,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
8.

Conference Proceedings
Conference Proceedings
8. GalnN/GaN multiple quantum well green LEDs
Koike,M. ; Koide,N. ; Asami,S. ; Umezaki,J. ; Nagai,S. ; Yamasaki,S. ; Shibata,N. ; Amano,H. ; Akasaki,I.
Pub. info.: Light-Emitting Diodes: Research, Manufacturing, and Applications.  pp.36-39,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3002