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34 results

Conference Proceedings

1. *CONDUCTIVITY CONTROL OF AIGaN, FABRICATION OF AIGaN/GaN MULTI-HETEROSTRUCTURE AND THEIR APPLICATION TO UV/BLUE LIGHT EMITTING DEVICES

Akasaki, I. ; Amano, H.

Pub. info.:	Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.383-394, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	242

Conference Proceedings

2. Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures

Monemar, B. ; Bergman, J. P. ; Dalfors, J. ; Pozina, G. ; Sernelius, B. E. ; Holtz, P. O. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G2.5.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

3. Recent Progress in Crystal Growth and Conductivity Control of Wide-Bandgap Group-III Nitride Semiconductors

Akasaki, I.

Pub. info.:	Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.145-, 1998. Warrendale, Pa. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	510

Conference Proceedings

4. N-K-Edge EXAFS Study of Epitaxial GaN Films

Katsikini, M. ; Paloura, E. C. ; Fieber-Erdmann, M. ; Moustakas, T. D. ; Amano, H. ; Akasaki, I.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.459-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

5. In Situ RHEED-TRAXS Monitoring Alloy Composition of the Surface During RF-MBE Growth of GAlnN and AlGaN

Ito, A. ; Sakai, H. ; Inagaki, M. ; Nomura, G. ; Nakamura, Y. ; Yasuda, T. ; Amano, H. ; Akasaki, I.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.441-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. The Evolution of Nitride Semiconductors

Akasaki, I.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.3-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

7. Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN

Chen, W. M. ; Buyanova, I. A. ; Wagner, Mt. ; Monemar, B. ; Lindstrom, J. L. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G5.4.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

8. Light Generating Carrier Recombination and Impurities in Wurtzite GaN/Al2O3 Grown by MOCVD

Kaufmann, U. ; Kunzer, M. ; Merz, C. ; Akasaki, I. ; Amano, H.,

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.633-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

9. 2.2 eV Luminescence in GaN

Hofmann, D. M. ; Kovalev, D. ; Steude, G. ; Volm, D. ; Meyer, B. K. ; Xavier, C. ; Monteiro, T. ; Pereira, E. ; Mokov, E. N. ; Amano, H. ; Akasaki, I.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.619-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

10.

Conference Proceedings

10. Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

Wetzel, C. ; Takeuchi, T. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.66.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

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