HETEROEPITAXIAL GROWTH OF ( AI ) GaAs ON InP BY MOVPE
- Author(s):
- Publication title:
- Heterostructures on silicon : one step further with silicon
- Title of ser.:
- NATO ASI series. Series E, Applied sciences
- Ser. no.:
- 160
- Pub. Year:
- 1989
- Page(from):
- 93
- Page(to):
- 99
- Pages:
- 7
- Pub. info.:
- Dordrecht: Kluwer Academic Publishers
- ISSN:
- 0168132X
- ISBN:
- 9780792301240 [0792301242]
- Language:
- English
- Call no.:
- N11482/160
- Type:
- Conference Proceedings
Similar Items:
Kluwer Academic Publishers |
SPIE-The International Society for Optical Engineering |
2
Conference Proceedings
GaAs on InP Based Optoelectronic Integrated Circuits for Optical Switching Networks
Plenum Press |
Plenum Press |
Electrochemical Society |
MRS - Materials Research Society |
4
Conference Proceedings
Extended-wavelength InGaAs detectors grown by metal-organic vapor phase epitaxy (MOVPE) on compliant substrates
SPIE-The International Society for Optical Engineering |
Materials Research Society |
Plenum Press |
Electrochemical Society |
SPIE - The International Society for Optical Engineering |
12
Conference Proceedings
*NOVEL GROWTH TECHNIQUES FOR THE FABRICATION OF PHOTONIC INTEGRATED CIRCUITS
Materials Research Society |