1.

Conference Proceedings
Conference Proceedings
1. Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
M. Wilson ; A. Savtchouk ; A. Findlay ; J. Lagowski ; P. Edelman
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.353-356,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Accurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CV
A. Savtchouk ; M. Wilson ; J. Lagowski ; A. Czett ; C. Buday
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.509-512,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. A Novel Approach to Measuring Doping in SiC by Micro Spot Corona-Kelvin Method
D. Marinskiy ; A. Savtchouk
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.273-276,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States
A. Savtchouk ; M. Wilson ; J. Lagowski
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.139-142,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897