1.

Conference Proceedings
Conference Proceedings
1. High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
J. Hassan ; J.P. Bergman ; A. Henry ; E. Janzén
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.115-118,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
2.

Conference Proceedings
Conference Proceedings
2. Growth and Properties of SiC On-Axis Homoepitaxial Layers
J. Hassan ; J.P. Bergman ; J. Palisaitis ; A. Henry ; P.J. McNally
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.83-88,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
3.

Conference Proceedings
Conference Proceedings
3. Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
J. Hassan ; A. Henry ; J.P. Bergman
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.307-310,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648