1.

Conference Proceedings
Conference Proceedings
1. Selective W for coating and releasing MEMS devices
Mani, S. S. ; Fleming, J. G. ; Sniegowski, J. J. ; Boer, M. P. de ; Irwin, L. W. ; Walraven, J. A. ; Tanner, D. M. ; LaVan, D. A.
Pub. info.: Materials science of microelectromechanical systems (MEMS) devices II : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.135-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 605
2.

Conference Proceedings
Conference Proceedings
2. Chemical vapor deposition coating for micromachines
Mani, S. S. ; Fleming, J. G. ; Sniegowski, J. J. ; Boer, M. P. de ; Irwin, L. W. ; Walraven, J. A. ; Tanner, D. M. ; Dugger, M. T.
Pub. info.: New methods, mechanisms and models of vapor deposition : symposium held April 24-26, 2000, San Francisco, California, U.S.A..  pp.21-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 616
3.

Conference Proceedings
Conference Proceedings
3. Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
Saks, N. S. ; Mani, S. S. ; Agarwal, A. K. ; Hegde, V. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.737-740,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
4.

Conference Proceedings
Conference Proceedings
4. Interface Trap Profiles near the Band Edges in 6H-SiC MOSFETs
Saks, N. S. ; Mani, S. S. ; Agarwal, A. K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1113-1116,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
5.

Conference Proceedings
Conference Proceedings
5. Investigation of Lateral RESURF, 6H-SiC MOSFETs
Saks, N. S. ; Mani, S. S. ; Hegde, V. S. ; Sanger, P. A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1307-1310,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)