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8 results

1.

Conference Proceedings

1. Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs

Sghaier, N. ; Bluet, J.M. ; Souifi, A. ; Guillot, G. ; Morvan, E. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1363-1366, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

2.

Conference Proceedings

2. UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC

Masarotto, L. ; Bluet, J.M. ; Guillot, G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.601-604, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

3.

Conference Proceedings

3. Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs

Sghaier, N. ; Bluet, J.M. ; Souifi, A. ; Guillot, G. ; Morvan, E. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1363-1366, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

4.

Conference Proceedings

4. QuaSiC Smart-Cut Substrates for SiC High Power Devices

Letertre, F. ; Jalaguier, E. ; Di Cioccio, L. ; Templier, F. ; Bluet, J.M. ; Banc, C. ; Matko, I. ; Chenevier, B. ; Bano, E. ; Guillot, G. ; Billon, T. ; Aspar, B. ; Madar, R. ; Ghyselen, B.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.151-154, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

5.

Conference Proceedings

5. QuaSiC Smart-Cut Substrates for SiC High Power Devices

Letertre, F. ; Jalaguier, E. ; Cioccio, L. D. ; Templier, F. ; Bluet, J.M. ; Banc, C. ; Matko, I. ; Chenevier, B. ; Bano, E. ; Guillot, G. ; Billon, T. ; Aspar, B. ; Madar, R. ; Ghyselen, B.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.151-154, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

6.

Conference Proceedings

6. Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS

Sartel, C. ; Souliere, V. ; Dazord, J. ; Monteil, Y. ; El-Harrouni, I. ; Bluet, J.M. ; Guillot, G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.263-266, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

7.

Conference Proceedings

7. UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC

Masarotto, L. ; Bluet, J.M. ; Guillot, G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.601-604, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

8.

Conference Proceedings

8. Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS

Sartel, C. ; Souliere, V. ; Dazord, J. ; Monteil, Y. ; El-Harrouni, I. ; Bluet, J.M. ; Guillot, G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.263-266, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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