1.

Conference Proceedings
Conference Proceedings
1. Recent Progress in Implantation and Annealing of GaN and AlGaN
Zolper, J. C. ; Han, J. ; Deusen, S. B. Van ; Crawford, M. H. ; Biefeld, R. M. ; Jun, J. ; Suski, T. ; Baranowski, J. M. ; Pearton, S. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.979-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. GaN Device Processing
Pearton, S. J. ; Ren, F. ; Zolper, J. C. ; Shul, R. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.961-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
3.

Conference Proceedings
Conference Proceedings
3. High Resolution Dry Etching of III-V Semiconductor Materials using Magnetically Enhanced Discharges
Pearton, S. J.
Pub. info.: Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX).  pp.73-86,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-18
4.

Conference Proceedings
Conference Proceedings
4. Non-Alloyed Ohmic Contacts on n-Type InP with Nitridation of Patterned InP Surface
Ren, F. ; Pearton, S. J. ; Lothian, J.R. ; Chu, S.N.G. ; Chu, W.K. ; Wilson, R.G. ; Abernathy, C.R. ; Pei, S.
Pub. info.: Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX).  pp.304-310,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-18
5.

Conference Proceedings
Conference Proceedings
5. DEGRADATION OF HYDROGEN-PASSIVATED p-TYPE LAYERS IN GaAs BY MINORITY CARRIER INJECTION AND REVERSE BIAS ANNEALING
Tavendale, A. J. ; Pearton, S. J. ; Williams, A. A. ; Alexiev, D.
Pub. info.: Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A..  pp.87-92,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 184
6.

Conference Proceedings
Conference Proceedings
6. USE OF SELECTIVE AREA DEFECT CREATION FOR ISOLATION OF III-V MULTILAYER STRUCTURES
Pearton, S. J. ; Ren, F. ; Fullowan, T. R, ; Katz, A. ; Hobson, W. S. ; Abernaty, C. R. ; Lothian, J., R. ; D'Asaro, L. A. ; Elliman, R. G. ; Ridgway, M. C. ; Jagadish, C. ; Williams,. J. S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.763-768,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
7.

Conference Proceedings
Conference Proceedings
7. COMPARISON OF CURRENT-INDUCED MIGRATION OF Be AND C IN GaAs.A1GaAs HBTs
Ren, F. ; Fullowan, T. R. ; Lochian, J. R. ; Wisk, P.W. ; Abernathy, C. R. ; Kopf, R.F ; Emerson, A. B. ; Downey, S. W. ; Pearton, S. J.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.797-802,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
8.

Conference Proceedings
Conference Proceedings
8. ACCEPTOR DELTA-DOPING FOR SCHOTTKY BARRIER ENHANCEMENT ON n-TYPE GaAs
Pearton, S. J. ; Ren, F. ; Abernathy, C. R. ; Katz, A. ; Hobson, W. S. ; Chu, S. N. G. ; Kovalchick, J.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.491-496,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
9.

Conference Proceedings
Conference Proceedings
9. SUSCEPTOR AND PROXIMITY RAPID THERMAL ANNEALING OF InP
Katz, A. ; Pearton, S. J. ; Geva, M.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.473-480,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
10.

Conference Proceedings
Conference Proceedings
10. In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Ren, F. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Emerson, A. B. ; Yanof, A. W. ; Schleich, D. M.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.481-486,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181