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24 results

Conference Proceedings

1. Characterization and modeling of advanced SOI materials and devices

Allibert, F. ; Pretet, J. ; Ernst, T. ; Jomaah, J. ; Cristoloveanu, S.

Pub. info.:	Progress in SOI structures and devices operating at extreme conditions. pp.239-248, 2002. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	58

Conference Proceedings

2. Review of radiation effects in single- and multiple-gate SOI MOSFETs

Cristoloveanu, S.

Pub. info.:	Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment. pp.197-214, 2005. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	185

Conference Proceedings

3. INVITED: ELECTRONIC DIVISIONAWARD ADDRESS: SOI TECHNOLOGY: THE FUTURE WILL NOT SCALE DOWN

Cristoloveanu, S.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.328-341, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

4. Adaptation of Ψ-MOSFET techniques for ultra thin SOI

Bresson, N. ; Allibert, F. ; Cristoloveanu, S.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.317-324, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

Conference Proceedings

5. Effects of etching processes on the properties of pseudo-MOSFETs for the UTSOI characterization

Bae, Y.-H. ; Kwon, K.-W. ; Lee, J.-H. ; Woo, H.-J. ; Cristoloveanu, S.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.295-300, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

Conference Proceedings

6. Short-channel, narrow channel, and ultra-thin oxide effects in advanced SOI MOSFETs

Zaouia, S. ; Goktepeli, S. ; Perera, A.H. ; Cristoloveanu, S.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.309-316, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

Conference Proceedings

7. Corner and coupling effects in multiple-gate FETs

Ritzenthaler, R. ; Faynot, O. ; Jahan, C. ; Cristoloveanu, S.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.283-288, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

Conference Proceedings

8. Electrical Properties of Metal-Buried Oxide-Silicon Structures Fabricated by Low Dose SIMOX Process

Dimitrakis, P. ; Papaioannou, G. ; Cristoloveanu, S.

Pub. info.:	Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium. pp.85-90, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-3

Conference Proceedings

9. Saturation current model for the n-channel G4-FET

Dufrene, B. ; Blalock, B. ; Cristoloveanu, S. ; Mojarradi, M. ; Kolawa, E.

Pub. info.:	Silicon-on-insulator technology and devices XI : proceedings of the international symposium. pp.367-372, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-5

10.

Conference Proceedings

10. INVITED: ELECTRONIC DIVISIONAWARD ADDRESS: SOI TECHNOLOGY: THE FUTURE WILL NOT SCALE DOWN

Cristoloveanu, S.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.328-341, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

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