Analysis of Avalanche Bahaviour for Paralleled MOSFETs.

Analysis of Avalanche Bahaviour for Paralleled MOSFETs.

Author(s):

Publication title:

2004 SAE world congress : technical paper

Title of ser.:

Society of Automotive Engineers technical paper series

Ser. no.:

2004

Pub. Year:

2004

No.:

2004-01-1595

Paper no.:

2004-01-1595

Pages:

7

Pub. info.:

Warrendale, Penn.: Society of Automotive Engineers

ISSN:

01487191

Language:

English

Call no.:

S10400

Type:

Technical Paper

Details

TDL ID:	ZA00001658
Series ID:	PA00000058
Conf. info. (Name):	SAE World Congress, 2004
Conf. info. (Number):	2004
Conf. info. (Venue):	Detroit, Michigan, USA
Conf. info. (Date):	2004.03.08-2004.03.11
Note for article:	SAE World Congress, 2004, Detroit, Michigan, 8-11 March, 2004; Reprinted From: In-Vehicle Networks and Software, Electrical Wiring Harnesses, and Electronics and Systems Reliability, SP-1852

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