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Electron-Electron Scattering Modifications of Intervalley Transition Rates and Ultrafast Relaxation of Hot Photoexcited Carriers in GaAs

Author(s):
Publication title:
NASA Technical Reports
Pub. Year:
1989
No.:
AD-A219 245
Paper no.:
AD-A219 245
Page(from):
1
Page(to):
5
Pages:
5
Pub. info.:
National Aeronautics and Space Adminstration
Language:
English
Type:
Technical Paper

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