Continuous czochralski growth. Development of advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

Continuous czochralski growth. Development of advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

Author(s):

Lane, R. L. ( Kayex Corporation )
Bezio, B. R. ( Kayex Corporation )
Boothroyde, J. ( Kayex Corporation )
Polsky, L. M. ( Kayex Corporation )
Johnson, C. M. ( Kayex Corporation )

Publication title:

NASA Technical Reports

Pub. Year:

1982

Issue:

NASA-CR-172965

No.:

G3/44 13580

Pt.:

NAS 1.26:172965

Paper no.:

N83-33319

Page(from):

1

Page(to):

134

Pages:

134

Pub. info.:

National Aeronautics and Space Administration

Language:

English

Type:

Technical Paper

Details

TDL ID:

ZA00002949

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