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The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices

Author(s):
P.M. Gammon
F. Li
C.W. Chan
A.M. Sanchez
S.A. Hindmarsh
F. Gity
T. Trajkovic
V. Kilchytska
V. Pathirana
G. Camuso
K. Ben Ali
D. Flandre
P.A. Mawby
J.W. Gardner
9 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. date:
2017
Page(from):
747
Page(to):
750
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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