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Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors

Author(s):
M.I. Idris
M.H. Weng
H.K. Chan
A.E. Murphy
D.A. Smith
R.A.R. Young
E.P. Ramsay
D.T. Clark
N.G. Wright
A.B. Horsfall
5 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. date:
2017
Page(from):
513
Page(to):
516
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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