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3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode

Author(s):
A. Shima
H. Shimizu
Y. Mori
M. Sagawa
K. Konishi
R. Fujita
T. Ishigaki
N. Tega
K. Kobayashi
S. Sato
Y. Shimamoto
6 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. Year:
2017
Page(from):
493
Page(to):
496
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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