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Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

Author(s):
H. Elahipanah
N. Thierry-Jebali
S.A. Reshanov
W. Kaplan
A. Zhang
J.K. Lim
M. Bakowski
M. Östling
A. Schöner
4 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. Year:
2017
Page(from):
455
Page(to):
458
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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